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Researcher
Oreste Madia
- Disciplines:Condensed matter physics and nanophysics
Affiliations
- Semiconductor Physics (Division)
Member
From23 Apr 2012 → 31 Oct 2016
Publications
1 - 7 of 7
- Defect generation at interfaces of Ge-based high-mobility semiconductors with oxide insulators ,,(2016)
Authors: Oreste Madia, Valeri Afanasiev, Andre Stesmans
- Intrinsic electron traps in atomic-layer deposited HfO2 insulators(2016)
Authors: Florin Cerbu, Oreste Madia, Jorge Kittl, Valeri Afanasiev, Michel Houssa, Andre Stesmans
- Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy(2015)
Authors: Oreste Madia, Valeri Afanasiev, Andre Stesmans
Pages: P3031 - P3036 - Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy(2015)
Authors: Oreste Madia, Valeri Afanasiev, Jorge Kittl, Andre Stesmans
Pages: 188 - 191 - Spectroscopy of deep gap states in high-k insulators(2014)
Authors: Valeri Afanasiev, Florin Cerbu, Oreste Madia, Michel Houssa, Andre Stesmans
Pages: 17 - 22 - Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy(2014)
Authors: Oreste Madia, Valeri Afanasiev, Andre Stesmans
Pages: 2211 - 2215 - Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers(2014)
Authors: Oreste Madia, Valeri Afanasiev, Andre Stesmans
Pages: 11 - 15