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Researcher
Kristin De Meyer
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2010 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 31 Jul 2010
Projects
1 - 7 of 7
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAMFrom16 Jun 2014 → 25 Nov 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance StudyFrom20 Jan 2014 → 4 Sep 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical Transistors: a slippery path towards the ultimate CMOS scalingFrom1 Nov 2012 → 26 Jan 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical MethodsFrom1 Oct 2012 → 28 Oct 2016Funding: Own budget, for example: patrimony, inscription fees, gifts
- Combined tunneling and Raman spectroscopy in nanogaps for single molecule analysis.From1 Oct 2011 → 30 Sep 2014Funding: FWO fellowships
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)From6 Sep 2011 → 19 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 177
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)(2018)
Authors: Maliheh Ramezani, Kristin De Meyer
- Regular and Inverted Operating Regimes in TiN/a-Si/TiOx/TiN RRAM Devices(2018)
Authors: Kristin De Meyer, Jan Van Houdt
Pages: 351 - 354 - Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact With Ultralow Contact Resistivity(2018)
Authors: Kristin De Meyer
Pages: 83 - 86 - Modeling of uniform switching RRAM devices and impact of critical defects(2017)
Authors: Kristin De Meyer, Jan Van Houdt
Pages: 93 - 97 - Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 214 - 215 - Record performance top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets(2017)
Authors: Siva Ramesh, Vamsi Putcha, Kristin De Meyer
Pages: 409 - 412 - Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 1 - 3 - Comprehensive study of Ga Activation in Si, SiGe and Ge and 5x10Ωcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 550 - 552 - On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by capacitance-voltage hysteresis(2017)
Authors: Vamsi Putcha, Kristin De Meyer
Pages: 144504 - Record performance top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets(2017)
Authors: Siva Ramesh, Tsvetan Ivanov, Vamsi Putcha, AliReza Alian, Arturo Sibaja-Hernandez, Rita Rooyackers, Elisabeth Camerotto, Alexey Milenin, Nicolo Pinna, Salim El Kazzi, et al.
Pages: 409 - 412