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Project

Fundamental challenges for two dimensional semiconductors

Two dimensional materials like graphene and transition metal dichalcogenides offer the possibility to realize high performance nanoelectronic circuits, operating at very low bias. Tunnel field effect transistors, based on the stacking of 2D materials (so called van der Waals heterostructures) are indeed very promising low power nanoelectronic devices. To fully exploit 2D channels in these devices, the growth of high quality 2D oxides (or oxide nanosheets) is required. In addition, further improvement of the device performances could be achieved by using the transport of spins rather than the transport of charges. Novel 2D oxides, being either magnetic or topological insulators, could potentially be integrated into such spintronic devices. The possibility to tune their magnetic properties or topological insulating state with a gate bias, mechanical strain, or by their doping/functionalization with molecules or atomic clusters, is also very attractive for the realization of new device concepts. In this project, the main goal is to predict, discover, synthesize and characterize 2D oxides with different electronic properties, as well as to combine them with 2D semiconductors and 2D metals into novel functional devices. These combinations will potentially enable future generations of ultrahigh speed and ultralow power logic, memory and photonic devices.
Date:1 Oct 2017 →  30 Sep 2021
Keywords:2D materials, Structural and electronic properties, MOS devices
Disciplines:Nanotechnology, Design theories and methods, Condensed matter physics and nanophysics