Extraction of the appropriate material property for realistic modeling of through-Silicon-vias using µ-Raman spectroscopy

Experimental μ-Raman spectroscopy (μRS) results are used to determine the appropriate plastic yield criterion for an accurate finite element modeling of stress in and near copper filled through-silicon-vias (TSV). It is found that the strain-hardening yield criterion gives the most accurate correlation between the μRS results and the finite element modeling. The verified yield criterion is used to simulate the effective keep-away-zone of transistors from the TSV. It is shown that transistor proximity is influenced by the via diameter. ©2008 IEEE.

ISBN:978-1-4244-1911-1

BOF-keylabel:yes

IOF-keylabel:yes

Authors from:Higher Education