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Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode

Journal Contribution - Journal Article

We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO 2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275 nm2 (35 nm × 65 nm). Stable switching was observed between a High-Resistive State HRS (∼1 M) and a Low-Resistive State LRS (∼100 k), using a low program current of ∼1 μA. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100 μA (high-CC LRS) or 10 μA (low-CC LRS), resulting, respectively in LRS resistances of 10 k or 100 k. The projected retention stability of low-CC LRS is ≥10 years at 80 C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (∼100 k), suggesting gentle filament formation. © 2013 Elsevier B.V. All rights reserved.
Journal: MICROELECTRONIC ENGINEERING
ISSN: 0167-9317
Volume: 112
Pages: 92 - 96
Publication year:2013
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education