Characterization of self-heating in high-mobility Ge FinFET pMOS devices

© 2015 JSAP. Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.

ISBN:9784863485013

Publication year:2015

BOF-keylabel:yes

IOF-keylabel:yes

Authors from:Government, Higher Education