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Characterization of time-dependent variability using 32k transistor arrays in advanced HK/MG technology

Book Contribution - Book Chapter Conference Contribution

© 2015 IEEE. Here we show that nFET and pFET time-dependent variability, in addition to the standard time-zero variability, can be fully characterized and projected using a series of measurements on a large test element group (TEG) fabricated in an advanced High-k/Metal Gate (HK/MG) technology, thus allowing us to fully characterize the underlying technology. BTI is shown to follow a bimodal defect-centric behavior, for NBTI related to Interface Layer (IL)(SiO2) and HK trapping and for PBTI related to HK and IL/HK interface trapping. Moreover for the first time, an analytical description of the bimodal total ΔVTH shift is derived, as a special case of the generalized defect-centric distribution, which we derive in this work to accurately describe the tail of the distribution.
Book: IEEE International Reliability Physics Symposium - IRPS
Pages: 3
ISBN:9781467373623
Publication year:2015
BOF-keylabel:yes
IOF-keylabel:yes
Authors from:Government, Higher Education