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Publication

Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP- and WS2-Based n-MOSFETs for Future Technology Nodes-Part II: Circuit-Level Comparison

Journal Contribution - Journal Article

Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 8
Volume: 66
Pages: 3614 - 3619
Publication year:2019
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Open