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High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si

Journal Contribution - Journal Article

We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (similar to 350 nm) Ge/SiGe quantum well stacks grown on Si. We demonstrate an absorption contrast Delta alpha/alpha of 2.1 at 1 Vpp swing in QCSE stacks grown on ultra-thin (100 nm) strain relaxed GeSi buffer layers on 300 mm Si wafers. Such ultra-thin QCSE stacks will enable future integration of highly efficient QCSE electro-absorption modulators with low optical coupling loss to passive Si waveguides in a sub-micron silicon photonics platform.
Journal: IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN: 1558-1713
Issue: 1
Volume: 56
Publication year:2020
Accessibility:Closed