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Publication
Modeling and Demonstration of Oxygen Vacancy-Based RRAM as Probabilistic Device for Sequence Learning
Journal Contribution - Journal Article
Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 2
Volume: 67
Pages: 505 - 511
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education
Accessibility:Closed