< Back to previous page

Project

Silicon Circuits for PMF

Silicon technology has made progress towards higher operating frequencies over the last decade, enabling applications utilizing frequency ranges beyond 100 GHz. Such applications include passive or RADAR imaging and high resolution sensors for industrial applications. There are two predominantly targeted frequency bands for applications operating beyond 100 GHz. The industrial sensing applications work on the 122-GHz industrial, scientific, and medical (ISM) band. Imaging applications such as radiometry or RADARs target the 140 GHz band to benefit from the reduced atmospheric attenuation window at this frequency. The proliferation of such applications has enabled the use of SiGe BiCMOS technologies for their implementations due to its higher cutoff frequencies compared to technologies such as SOI CMOS and FinFET. However, with the advancements over the recent years, planar CMOS technologies and FinFET has shown promise for use in mm-wave applications. This project aims to utilize 16nm FinFET in the design of a RADAR front-end operating in 140 GHz. The use of the higher frequency band allows the use of higher bandwidth, thus higher range resolution. The use of FinFET technology comes with its set of challenges compared to planar CMOS technologies in the design of analog circuitry, but its use presents a unique aspect of lower die area and power consumption with the opportunity of integration with high-speed digital circuitry.

Date:7 Oct 2020 →  Today
Keywords:RADAR, FinFET, mm-wave
Disciplines:Microwaves, millimetre waves and THz components and circuits and systems
Project type:PhD project