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Project

MBE growth and characterization of novel topological insulating oxide-based materials

Topological insulating materials have been grasping wide interest recently due to their very promising transport properties. Bismuth based perovskite oxide materials have the capability to demonstrate the topological insulating properties when grown in a controlled environment, because of the very strong spin orbit coupling present in Bi. Molecular beam epitaxy (MBE) allows for the growth of the novel oxide materials with a well-defined stoichiometry and high quality. With MBE approach as well as advanced characterization techniques such as Angle Resolved Photo-Emission Spectroscopy (ARPES), efficient generation of Majorana fermions is foreseen at the topological interface. The generation of Majorana fermions is a crucial step in the framework of developing scalable Majorana based devices which are expected to be very promising physical realization of a 'fault-tolerant' quantum-bit (qubit).

Date:21 Jan 2021 →  Today
Keywords:MBE
Disciplines:Surfaces, interfaces, 2D materials, Metrology, Quantum information, computation and communication, Chemical crystallography
Project type:PhD project