Time resolved IR and photoemission studies of EUV-Matter interactions

Surface and interface analysis within the semiconductor industry have reached a level of refinement beyond that imaginable 25 years ago. Likewise, device architectures and dimensions are now at a level not thought possible even 10 years ago. With this, the question often asked is: How far can this go on for. In an effort to gain a better understanding of the path forward, PhD- student researchers will be responsible for the development of the scientific application of the photoemission end-station of the platform, which is based on a SPECSTM KREIOS analyzer, allowing Photo Electron Emission Microscopy (PEEM) and micro Angular Resolved Photo Emission Spectroscopy (µ-ARPES) operated in continuous or tr pump-probe modes. Standard UPS and XPS will also be present. A preparation chamber containing both Auger Electron Spectroscopy, and Low Energy Electron Diffraction is connected to the system. Through this PhD, the successful applicant will actively work on this facility, as well as the XPS within the MCA labs if needed. The primary aim will be to use the IR and photoemission spectroscopies to gain a better insight into the chemistry and kinetics taking place in Photo-resist materials under EUV exposure. Other exotic materials such as Transition Metal Dichalcogenides, Topological Insulators, etc. will also be examined using this facility. To aid in Photo-resist spectral identification and to understand the time dependent mechanisms that take place, a parallel PhD activity employing atomistic simulations will be active to allow a comparison of the measured spectra with quantum chemical calculations.