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Project

Characterization of defects and reliability on Transition Metal Dichalcogenide (MX2) Based Field-Effect Devices

In this PhD, electrical characterization and data analysis on 2D MOS devices will be performed in order to investigate the impact of MX2 defects, gate stack defects (bottom substrate and deposited top gate) and scaling of device dimensions on noise and reliability. Advanced measurement techniques like Time-Dependent Defect Spectroscopy (TDDS), Random Telegraph Signal (RTS) and T-dependent noise measurements will be performed in order to understand which factors influence the electrical impact of traps and their energy distribution. Additionally, phenomena that may lead to hysteresis, bias temperature instability (BTI), and hot-carrier degradation (HCD), such as the creation of novel traps or the carrier capture by pre-existing states, will be explored. Finally, possible trap candidates will be identified and incorporated into device and transport simulators, in collaboration with the ab initio and device modeling teams at imec, and fed back to further improve device processing.

Date:20 Sep 2021 →  Today
Keywords:Reliability, 2DFETs, Semiconductor devices
Disciplines:Semiconductor devices, nanoelectronics and technology, Nanoelectronics
Project type:PhD project