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Publication

Deep submicron CMOS for millimeter wave power applications

Journal Contribution - Journal Article

This letter gives an early assessment of deep submicron planar bulk CMOS devices for millimeter wave power amplifier (PA) applications. Using load pull measurements, a record high power density of 100 mW/mm and a transducer gain of 7 dB at 35 GHz were achieved for a 40 nm physical gate length CMOS device with a total gate width of 192 μm. Furthermore a peak PAE of 33% was reached. This shows that 40 nm gate length CMOS is feasible for medium PAs in the millimeter wave region.

Journal:  IEEE Microw Wirel Compon Let
ISSN: 1531-1309
Issue: 5
Volume: 18
Pages: 329-331
Publication year:2008
Keywords:CMOS, Microwave, Millimeter wave, Power amplifiers (PAs)