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Publication
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
Journal Contribution - Journal Article
Journal: IEEE Transactions on Device and Materials Reliability
ISSN: 1530-4388
Issue: 2
Volume: 21
Pages: 176 - 182
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Closed