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Publication

Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory

Journal Contribution - Journal Article

Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 4
Volume: 68
Pages: 2098 - 2106
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Closed