Quantum color centers in diamond: unraveling the link between the atomic-scale structure and functionality

Group IV color centers in diamond have recently shown very
promising optical properties for a variety of quantum technology
applications. Although the symmetry of the defect configuration
(believed to result from a split-vacancy configuration) is crucial for
strong, narrowband emission, hardly any direct information is
available on the defect structure.
Based on our unique experimental approach, i.e. combining emission
channeling and photoluminescence (PL) using radioactive impurity
atoms (at the ISOLDE facility), we will unambiguously identify and
quantify the defect structures and link them directly to the specific PL
lines. The experiments will be complemented with a detailed
luminescence investigation (Leuven) on selected samples with
known defect configurations. Next, we will investigate how these
structural configurations and their optical response depend on the ion
implantation conditions, such as fluence, implantation temperature or
annealing conditions.
Based on a very successful proof-of-principle experiment, we will
focus on the Sn-vacancy defect, and investigate the link between the
defect structure and the functional properties (PL peak position,
intensity, linewidth, as well as decoherence time). Besides Sn, we
will also explore other group IV elements and a number of promising
group II elements.
The outcome of this project will provide insight in how the PL of these
color centers can be optimally tuned by adjusting the implantation
conditions