Method for manufacturing a mask

A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

Patent Publication Number: US10720336

Year filing: 2020

Year approval: 2020

Year publication: 2020

Status: Assigned

Technology domains: Semiconductors, Optics, Basic materials chemistry

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven