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Patent

Selective deposition for interdigitated patterns in solar cells

A method (100) for creating an interdigitated pattern for a solar cell is provided, including providing (S110) a substrate with one or more regions covered by a first passivation layer stack covered by a hard mask, and one or more exposed regions. A second passivation layer stack, including at least one layer, is selectively deposited on the exposed regions, including plasma depositing (S120) a sublayer of the at least one layer on the exposed regions and on the hard mask, and plasma etching (S130) the added sublayer with an etch rate that is higher on the hard mask than on the exposed regions, thereby substantially removing the sublayer from the hard mask while leaving a finite thickness of the sublayer on the exposed regions, plasma cleaning (S150) the remaining sublayer, and adding a further sublayer by repeating the steps of deposition (S120) and etching (S130). Cleaning, deposition and etching may be repeated (S142) until a desired thickness of the at least one layer of the second passivation layer stack is obtained.
Patent Publication Number: EP3624204
Year filing: 2020
Year approval: 2021
Year publication: 2020
Status: Requested
Technology domains: Semiconductors
Validated for IOF-key: Yes
Attributed to: Associatie KULeuven