GaN-on-Si for high-voltage applications

This work provides an overview of our GaN-on-Si activity for high voltage applications. We will discuss the failure mechanisms of GaN-on-Si devices by electrical characterization and TCAD simulations. The main issues of the use of the Si as substrate are identified and addressed. A breakdown voltage as high as 1050 V and a specific on-resistance as low as 2 mOhm·cm2have been achieved. ©The Electrochemical Society.

ISBN:978-1-60768-262-2

Publication year:2011

BOF-keylabel:yes

IOF-keylabel:yes

Authors from:Government, Higher Education