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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics
Journal Contribution - Journal Article
In this letter, the dynamic R-on degradation mechanisms of the p-GaN gate HEMTs induced by off-state stress are investigated with different passivation dielectrics AlON and SiN. The degradation mechanisms are twofold, including V-TH shift and surface trapping in the gate-to-drain access region, whose impacts are successfully distinguished. Surface trapping by SiN passivation is evidently proved to be the dominant factor that can almost induce a full current collapse. The V-TH positive shift diminishes the drain current by shrinking the overdrive V-GS, which however, can be compensated by a higher V-GS overdrive in applications. SiN passivation can effectively suppress the positive bias temperature instability effect, probably by passivating the p-GaN fast traps with hydrogen during passivation. Last, the transient measurements unveil that both the surface trapping and V-TH shift have a very slow recovery process.
Journal: IEEE TRANSACTIONS ON POWER ELECTRONICS
Pages: 4927 - 4930