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Publication

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Journal Contribution - Journal Article

Journal: IEEE TRANSACTIONS ON POWER ELECTRONICS

ISSN: 1941-0107

Issue: 5

Volume: 36

Pages: 4927 - 4930

Publication year:2021

WoS Id: 000613453900005
Handle: http://hdl.handle.net/1854/LU-8715701
DOI: https://doi.org/10.1109/tpel.2020.3031680

Accessibility:Closed

See also: Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics