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Publication
Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET
Journal Contribution - Journal Article
Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 7
Volume: 68
Pages: 3246 - 3253
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education
Accessibility:Open