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Publication

LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration

Journal Contribution - Journal Article

Journal: IEEE Transactions on Electron Devices

ISSN: 0018-9383

Issue: 3

Volume: 69

Pages: 915 - 921

Publication year:2022

Institutional Repository URL: https://lirias.kuleuven.be/3694411
DOI: https://doi.org/10.1109/ted.2022.3141983
WoS Id: 000750221700001

Accessibility:Open