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Publication

Modeling and Demonstration of Oxygen Vacancy-Based RRAM as Probabilistic Device for Sequence Learning

Journal Contribution - Journal Article

Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 2
Volume: 67
Pages: 505 - 511
Number of pages: 7
Publication year:2020
Keywords:Electrical & electronic engineering, Applied physics