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Publication
Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
Journal Contribution - Journal Article
Journal: IEEE Electron Device Letters
ISSN: 0741-3106
Issue: 9
Volume: 42
Pages: 1280 - 1283
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Open