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Researcher
Andrea Firrincieli
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 15 Jul 2011 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 15 Jul 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From16 Jul 2007 → 18 Nov 2007
Publications
1 - 10 of 17
- Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates(2014)
Authors: Andrea Firrincieli, Shuzhen You
- Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates(2014)
Authors: Andrea Firrincieli
Pages: 446 - 449 - Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm substrates(2013)
Authors: Andrea Firrincieli, Shuzhen You
Pages: 914 - 915 - Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates(2013)
Authors: Andrea Firrincieli
Pages: 446 - 449 - CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices(2012)
Authors: Federica Gencarelli, André Vantomme, Clement Merckling, Han Chung Lin, Valeri Afanasiev, Andrea Firrincieli, Wilfried Vandervorst
Pages: 118 - 119 - Study of ohmic contacts to n-type Ge: snowplow and laser activation(2011)
Authors: Andrea Firrincieli, Koen Martens, Cor Claeys, Jorge Kittl
Pages: 242104 - Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces(2011)
Authors: Ali Reza Alian, Clement Merckling, Andrea Firrincieli, Han Chung Lin, Kristin De Meyer, Marc Heyns
- Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors(2011)
Authors: Andrea Firrincieli, Jelle Demeulemeester, André Vantomme
Pages: 342 - 346 - Ge chemical vapor deposition on GaAs for low resistivity contacts(2011)
Authors: Andrea Firrincieli, Niamh Waldron, Wilfried Vandervorst
Pages: H203 - H207 - Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment(2011)
Authors: Niamh Waldron, Han Chung Lin, Andrea Firrincieli, Gang Wang, Marc Heyns
Pages: 299 - 309
Patents
1 - 1 of 1