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Researcher
Anne Verhulst
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → Today - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Apr 2010 - Electrical Energy Systems and Applications (ELECTA) (Division)
Member
From1 Aug 2020 → 31 Dec 2007 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Oct 2008 → 30 Apr 2010
Projects
1 - 5 of 5
- Enabling 3D scanning probe microscopy for nanoelectronics device analysis and TCAD calibration of advanced technology nodesFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- The demonstration of next DRAM with 3D structure using novel channel materialFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Calibration of TCAD process simulators towards N2 with advanced 2D/3D metrology solutions including SPM-based SSRM techniqueFrom22 Jun 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of hybrid nanofluidic-nanoelectronic devices for single-molecule biosensingFrom26 Aug 2021 → 22 Apr 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of the tunnel field-effect transistor.From19 Oct 2009 → 30 Apr 2010Funding: BOF - Other initiatives
Publications
1 - 10 of 101
- Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules(2022)
Authors: Anne Verhulst, Kherim Willems, Pol Van Dorpe
Pages: 5732 - 5742 - Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification(2022)
Authors: Anne Verhulst, Ingrid De Wolf, Jan Van Houdt
Pages: 5345 - 5350 - Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools" Foreword(2021)
Authors: Anne Verhulst
Pages: 5346 - 5349 - Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation(2021)
Authors: Jasper Bizindavyi, Anne Verhulst
- Investigation of Imprint in FE-HfO2 and Its Recovery(2020)
Authors: Anne Verhulst, Jan Van Houdt
Pages: 4911 - 4917 - Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET(2020)
Authors: Jasper Bizindavyi, Anne Verhulst, Guido Groeseneken
Pages: 3486 - 3491 - Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices(2019)
Authors: Jasper Bizindavyi, Anne Verhulst, Guido Groeseneken
Pages: 1864 - 1867 - Process-Induced Power-Performance Variability in Sub-5nm III-V Tunnel FETs(2019)
Authors: Yang Xiang, Anne Verhulst, Guido Groeseneken
Pages: 2802 - 2808 - Phonon-assisted tunneling in direct-bandgap semiconductors(2019)
Authors: Mazharuddin Mohammed, Anne Verhulst, Guido Groeseneken
- Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra(2018)
Authors: Somya Gupta, Anne Verhulst, Marc Heyns
Patents
1 - 10 of 10
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Layered structure of a p-tfet (Inventor)
- Layered structure of a p-tfet (Inventor)
- Drain extension region for tunnel fet (Inventor)
- Tunnel field-effect transistors based on silicon nanowires (Inventor)
- Drain extension region for tunnel fet (Inventor)
- A tunnel field-effect transistor with gated tunnel barrier (Inventor)
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)