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Researcher
Annelies Delabie
- Disciplines:Physical chemistry, Theoretical and computational chemistry, Other chemical sciences, Biochemistry and metabolism, Medical biochemistry and metabolism, Atmospheric sciences
Affiliations
- Quantum Chemistry and Physical Chemistry (Division)
Member
From1 Oct 2012 → Today
Projects
1 - 10 of 19
- Ferroelectric memories: multi-layers stacks with tailored physical and electric properties by atomic layer depositionFrom20 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic-scale bottom-up fabrication: Area-Selective Deposition (ASD) of Si-based dielectrics and its application in IC manufacturingFrom15 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Interface study of ferroelectric/oxide semiconductor stacks and devicesFrom20 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Area-selective deposition mechanisms when pattern dimensions reach the nanoscaleFrom11 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic layer deposition of two-dimensional transition metal dichalcogenides and ovonic threshold switching materials: A new computational framework for precursor designFrom1 Oct 2022 → TodayFunding: FWO Strategic Basic Research Grant
- Alternative semiconducting oxides for future DRAM applicationsFrom25 May 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Creating dielectric layers on two-dimensional (2D) semiconductors: chemical and physical mechanismsFrom18 Jan 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Mechanisms and Selectivity during Atomic Layer Deposition of Germanium Chalcogenides for Storage Class Memory ApplicationsFrom1 Oct 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Dielectric Nanosheets for Scaled Two-Dimensional (2D) Material DevicesFrom22 Jan 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Towards graphoepitaxy of semiconducting 2D single crystals on dielectric substrate patterns for next generation nanoelectronic devicesFrom5 Jan 2021 → TodayFunding: FWO Strategic Basic Research Grant
Publications
21 - 30 of 180
- Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask(2021)
Authors: Annelies Delabie
- A chemisorbed interfacial layer for seeding atomic layer deposition on graphite(2021)
Authors: Anton Brown, Stefan De Gendt, Annelies Delabie, Steven De Feyter
Pages: 12327 - 12341 - Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition(2020)
Authors: Marc Heyns, Annelies Delabie
- Area-Selective Deposition of Ruthenium by Area-Dependent Surface Diffusion(2020)
Authors: Annelies Delabie
Pages: 9560 - 9572 - Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide(2020)
Authors: Annelies Delabie
Pages: 7163 - 7173 - Structural Phases of Alkanethiolate Self-Assembled Monolayers (C1-12) on Cu[100] by Density Functional Theory(2020)
Authors: Jan-Willem Clerix, Jeremy Harvey, Annelies Delabie
Pages: 3802 - 3811 - Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition(2019)
Authors: Job Soethoudt, Annelies Delabie
Pages: 11911 - 11918 - Defect Mitigation in Area-Selective Atomic Layer Deposition of Ruthenium on Titanium Nitride/Dielectric Nanopatterns(2019)
Authors: Job Soethoudt, Annelies Delabie
- Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature(2019)
Authors: Benjamin Groven, Wilfried Vandervorst, Marc Heyns, Iuliana Radu, Annelies Delabie
- Diffusion-Mediated Growth and Size-Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates(2018)
Authors: Job Soethoudt, Annelies Delabie
Patents
1 - 10 of 10
- Method of manufacturing a semiconductor structure (Inventor)
- Method of manufacturing a semiconductor structure (Inventor)
- A method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- A method for forming a silicide gate for a semiconductor device (Inventor)
- Method of producing transition metal dichalcogenide layer (Inventor)
- Method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- Method of forming a feature of a target material on a substrate (Inventor)
- METHOD OF PRODUCING TRANSITION METAL DICHALCOGENIDE LAYER (Inventor)
- Method for selectively depositing noble metals on metal/metal nitride substrates (Inventor)
- Oxygen monolayer on a semiconductor (Inventor)