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Researcher
Cor Claeys
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 18 Nov 2007
Publications
1 - 10 of 455
- Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate(2021)
Authors: huihui Wang, Cor Claeys
Pages: 6020 - 6025 - Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs(2021)
Authors: Cor Claeys
- Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs(2021)
Authors: Cor Claeys
- Detailed low frequency noise assessment on GAA NW n-channel FETs(2021)
Authors: Cor Claeys
- Low Frequency Noise: A Show Stopper for State-of-the-art and Future Si, Ge-based and III-V Technologies(2021)
Authors: Cor Claeys
Number of pages: 3 - Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments(2020)
Authors: Cor Claeys
Pages: 754 - 759 - Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates(2020)
Authors: Cor Claeys
Pages: 4802 - 4807 - Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization(2020)
Authors: Cor Claeys
- Low-Frequency Noise Characterization of Germanium n-Channel FinFETs(2020)
Authors: Cor Claeys
Pages: 2872 - 2877 - Analog design with Line-TFET device experimental data: from device to circuit level(2020)
Authors: Cor Claeys