Researcher
Geert Hellings
- Keywords:Electronics and electrical engineering
Affiliations
- Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Dec 2011
Publications
1 - 10 of 62
- Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications(2016)
Authors: R Ritzenthaler, T Schram, L Witters, J Mitard, A Spessot, C Caillat, Geert Hellings, G Eneman, M Aoulaiche, H-J Na, et al.
Pages: 255 - 258Number of pages: 4 - On and off state Hot Carrier reliability in Junctionless high-K MG gate-all-around nanowires(2015)
Authors: Moon Ju Cho, Geert Hellings, Anabela Veloso, Eddy Simoen, Philippe Roussel, Ben Kaczer, Hiroaki Arimura, W Fang, Jacopo Franco, Philippe Matagne, et al.
Pages: 366 - 369 - VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology(2015)
Authors: Shih-Hung Chen, Geert Hellings, Roman Boschke, Guido Groeseneken
Pages: 9 - 1 - Characterization of self-heating in high-mobility Ge FinFET pMOS devices(2015)
Authors: Geert Hellings, Guido Groeseneken
Pages: 60 - 61 - ESD characterization of planar InGaAs devices(2015)
Authors: Roman Boschke, Geert Hellings, Shih-Hung Chen, Ali Reza Alian, Jacopo Franco, Guido Groeseneken
Pages: 3 - ESD characterization of gate-all-around (GAA) Si nanowire devices(2015)
Authors: Shih-Hung Chen, Geert Hellings, Dimitri Linten, Anabela Veloso, Mirko Scholz, Roman Boschke, Guido Groeseneken, Aaron Thean
Pages: 362 - 365 - ESD protection diodes in optical interposer technology(2015)
Authors: Roman Boschke, Guido Groeseneken, Shih-Hung Chen, Geert Hellings
Pages: 1 - 4 - Characterization of Germanium ESD devices(2014)
Authors: Roman Boschke, Dimitri Linten, Geert Hellings, Shih-Hung Chen, Mirko Scholz, Jerome Mitard, Hans Mertens, Liesbeth Witters, Joris Van Campenhout, Peter Verheyen, et al.
Pages: 68 - 76 - Local CDM ESD protection circuits for cross-power domains in 3D IC applications(2014)
Authors: Shih-Hung Chen, Geert Hellings, Roman Boschke, Guido Groeseneken
Pages: 781 - 783 - Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate(2014)
Authors: Shih-Hung Chen, Geert Hellings, Roman Boschke, Guido Groeseneken
Number of pages: 5