Researcher
Geert Hellings
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 31 Dec 2011 - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Nov 2011 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From16 Apr 2005 → 18 Nov 2007
Publications
31 - 40 of 74
- ESD characterization of hgh mobility SiGe quantum well and Ge devices for future CMOS scaling(2012)
Authors: Geert Hellings, Shih-Hung Chen, Guido Groeseneken
Number of pages: 6 - Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach(2012)
Authors: Geert Hellings, Wilfried Vandervorst
Pages: 30 - Implant free SiGe-quantum well: from device concept to high-performing pFETs(2012)
Authors: Jerome Mitard, Geert Eneman, Geert Hellings, Liesbeth Witters, Andriy Hikavyy, Benjamin Vincent, Roger Loo, Hugo Bender, Naoto Horiguchi, Nadine Collaert, et al.
Pages: 131 - 143 - Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations(2012)
Authors: Aftab Nazir, Geert Hellings, Andreas Schulze, Jay Mody, Kristin De Meyer, Wilfried Vandervorst
Pages: 38 - 42 - Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET(2012)
Authors: Geert Hellings, Kristin De Meyer
Pages: 808 - 817 - Challenges for introducing Ge and III/V devices into CMOS technologies(2012)
Authors: Marc Heyns, Ali Reza Alian, Jacopo Franco, Federica Gencarelli, Guido Groeseneken, Geert Hellings, Michel Houssa, Han Chung Lin, Clement Merckling, Wilfried Vandervorst, et al.
Pages: 5 - Stress techniques and mobility enhancement in FinFET architectures(2012)
Authors: Geert Hellings, Kristin De Meyer
Pages: 47 - 58Number of pages: 12 - Numerical analysis of the new implant-free quantum-well CMOS: dualLogic approach(2011)
Authors: Geert Hellings, Kristin De Meyer
Pages: 14 - 18 - Systematic study of shallow junction formation on germanium substrates(2011)
Authors: Geert Hellings, Kristin De Meyer, Wilfried Vandervorst
Pages: 347 - 350 - Systematic study of shallow junction formation on germanium substrates(2011)
Authors: Geert Hellings, Erik Rosseel, Trudo Clarysse, Dirch Hjorth Petersen, Ole Hansen, Peter Folmet Nielsen, Eddy Simoen, Geert Eneman, Brice De Jaeger, Thomas Y Hoffmann, et al.
Pages: 347 - 350
Patents
1 - 5 of 5
- Method for fabricating finfet technology with locally higher fin-to-fin pitch (Inventor)
- Breakdown-based physical unclonable function (Inventor)
- Breakdown-based physical unclonable function (Inventor)
- Scalable quantum well device and method for manufacturing the same (Inventor)
- IMPLANT FREE QUANTUM WELL TRANSISTOR, METHOD FOR MAKING SUCH AN IMPLANT FREE QUANTUM WELL TRANSISTOR AND USE OF SUCH AN IMPLANT FREE QUANTUM WELL TRANSISTOR (Inventor)