Researcher
Geert Hellings
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 31 Dec 2011 - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Nov 2011 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From16 Apr 2005 → 18 Nov 2007
Publications
61 - 70 of 74
- Defects, junction leakage and electrical performance of Ge pFET devices(2009)
Authors: Gang Wang, Geert Hellings, Kristin De Meyer, Cor Claeys, Marc Heyns
Pages: 195 - 205 - Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI(2009)
Authors: Gang Wang, Michel Houssa, Geert Hellings, Andre Stesmans, Kristin De Meyer, Marc Heyns
Pages: 82 - 83 - AlGaN Schottky diodes for detector applications in the UV wavelength range(2009)
Authors: Geert Hellings, Pawel Malinowski, Robert Pierre Mertens
Pages: 2833 - 2839 - Implantation, diffusion, activation and recrystallization of gallium implanted in preamorphized and crystalline germanium(2009)
Authors: Geert Hellings, Geert Eneman, Wilfried Vandervorst, Kristin De Meyer
Pages: H417 - H419 - Scalability of quantum well devices for digital logic applications(2009)
Authors: Geert Hellings, Niamh Waldron, Kristin De Meyer, Marc Heyns
Pages: 33 - 34 - High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants(2009)
Authors: Geert Hellings, Jerome Mitard, Geert Eneman, Marc Heyns, Kristin De Meyer
Pages: 88 - 90 - Germanium for advanced CMOS anno 2009: a SWOT analysis(2009)
Authors: Florence Bellenger, Clement Merckling, Annelies Delabie, Gang Wang, Geert Hellings, Kristin De Meyer, Marc Heyns
Pages: 461 - 464 - Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions(2008)
Authors: Geert Eneman, Geert Hellings, Kristin De Meyer, Cor Claeys, Marc Heyns
Pages: 2287 - 2296 - Record Ion/Ioff performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability(2008)
Authors: Geert Hellings, Koen Martens, Kristin De Meyer, Marc Heyns
Pages: 873 - 876 - AlGaN Schottky diodes for detector applications in the UV wavelength range(2008)
Authors: Geert Hellings, Robert Pierre Mertens
Pages: 916 - 922
Patents
1 - 5 of 5
- Method for fabricating finfet technology with locally higher fin-to-fin pitch (Inventor)
- Breakdown-based physical unclonable function (Inventor)
- Breakdown-based physical unclonable function (Inventor)
- Scalable quantum well device and method for manufacturing the same (Inventor)
- IMPLANT FREE QUANTUM WELL TRANSISTOR, METHOD FOR MAKING SUCH AN IMPLANT FREE QUANTUM WELL TRANSISTOR AND USE OF SUCH AN IMPLANT FREE QUANTUM WELL TRANSISTOR (Inventor)