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Researcher
Karine Florent
- Disciplines:Nanotechnology, Sensors, biosensors and smart sensors, Other electrical and electronic engineering, Design theories and methods
Affiliations
- Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 29 Jul 2019 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Dec 2015 → 31 Jul 2020
Projects
1 - 1 of 1
- Evaluation of Alternative Vertical Transistors for 3D NAND ApplicationsFrom1 Dec 2015 → 7 Jun 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 12
- New Insights into the Imprint Effect in FE-HfO2 and its Recovery(2019)
Authors: Karine Florent, Jan Van Houdt
Number of pages: 7 - Thermal Stability of Copper-Nickel and Copper-Nickel Silicide Contacts for Crystalline Silicon(2018)
Authors: Abhijit S Kale, William Nemeth, Craig L Perkins, David Young, Alexander Marshall, Karine Florent, Santosh K Kurinec, Paul Stradins, Sumit Agarwal
Pages: 2841 - 2848 - The flexoelectric effect in Al-doped hafnium oxide(2018)
Authors: Karine Florent, Jan Van Houdt, Wilfried Vandervorst
Pages: 8471 - 8476 - Investigation of the Endurance of FE-HfO2 Devices by Means of TDDB Studies(2018)
Authors: Karine Florent, Guido Groeseneken, Jan Van Houdt
Number of pages: 7 - First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications(2018)
Authors: Karine Florent, Jan Van Houdt
Number of pages: 4 - Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory(2018)
Authors: Karine Florent, Guido Groeseneken, Jan Van Houdt
Number of pages: 4 - Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications(2017)
Authors: Karine Florent, Guido Groeseneken, Jan Van Houdt
Pages: 204103 - From planar to vertical capacitors : a first step towards ferroelectric V-FeFET integration(2017)
Authors: Karine Florent, Guido Groeseneken, Jan Van Houdt
Pages: 164 - 167 - First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications(2017)
Authors: Karine Florent, Guido Groeseneken, Jan Van Houdt
Pages: 158 - 159 - Layered structure of MOS2 investigated using electron energy loss spectroscopy(2015)
Authors: Karine Florent
Pages: 96 - 99