< Back to previous page
Researcher
Vaishnavi Kateel
- Disciplines:Memory components
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → Today - Department of Electrical Engineering (ESAT) (Department)
Member
From6 Jan 2020 → 31 Jul 2020
Projects
1 - 1 of 1
- Exploring integrated Spin-Orbit Torque SOT-MRAM for nonvolatile, low power, and ultrafast magnetic memoriesFrom8 Jan 2020 → 8 Jan 2024Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 4 of 4
- Impact of net magnetization on spin-orbit torque switching of synthetic ferromagnets in magnetic tunnel junctions(2024)
Authors: Vaishnavi Kateel, Jo De Boeck
- Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current(2023)
Authors: Vaishnavi Kateel, Jo De Boeck
Pages: 5482 - 5489 - Tailoring the Switching Efficiency of Magnetic Tunnel Junctions by the Fieldlike Spin-Orbit Torque(2022)
Authors: Vaishnavi Kateel
- Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications(2021)
Authors: Vaishnavi Kateel