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Researcher
Kristin De Meyer
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2010 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 31 Jul 2010
Projects
1 - 7 of 7
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAMFrom16 Jun 2014 → 25 Nov 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance StudyFrom20 Jan 2014 → 4 Sep 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical Transistors: a slippery path towards the ultimate CMOS scalingFrom1 Nov 2012 → 26 Jan 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical MethodsFrom1 Oct 2012 → 28 Oct 2016Funding: Own budget, for example: patrimony, inscription fees, gifts
- Combined tunneling and Raman spectroscopy in nanogaps for single molecule analysis.From1 Oct 2011 → 30 Sep 2014Funding: FWO fellowships
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)From6 Sep 2011 → 19 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
11 - 20 of 177
- Lanthanum and lanthanum silicide contacts on N-Type silicon(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 843 - 846 - Study of electrical breakdown and secondary pull-in failure modes for NEM relays(2017)
Authors: Maliheh Ramezani, Kristin De Meyer
- A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET(2017)
Authors: Koen Martens, Vamsi Putcha, Kristin De Meyer
Pages: 318 - 321 - Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory(2017)
Authors: Kristin De Meyer, Jan Van Houdt
Pages: 130 - 136 - TiSi(Ge) contacts formed at low temperature achieving around 2x10-9Ωcm2 contact resistivities to p-SiGe(2017)
Authors: Hao Yu, Kristin De Meyer
Pages: 500 - 506 - Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts(2016)
Authors: Hao Yu, Kristin De Meyer
Pages: 1 - 5 - Thermal stability concern of metal-insulator-semiconductor contact: a case study of Ti/TiO2/n-Si contact(2016)
Authors: Hao Yu, Kristin De Meyer
Pages: 2671 - 2676 - Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells(2016)
Authors: Adrian Nelson Vaisman Chasin, Siva Ramesh, Kristin De Meyer
Pages: 138 - 139 - Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devices(2016)
Authors: Hao Yu, Kristin De Meyer
Pages: 66 - 68 - Extensive reliability investigation of a-VMCO nonfilamentary RRAM: relaxation, retention and key differences to filamentary switching(2016)
Authors: Yangyin Chen, Kristin De Meyer, Jan Van Houdt
Pages: 6