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Researcher
Kristin De Meyer
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2010 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 31 Jul 2010
Projects
1 - 7 of 7
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAMFrom16 Jun 2014 → 25 Nov 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance StudyFrom20 Jan 2014 → 4 Sep 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical Transistors: a slippery path towards the ultimate CMOS scalingFrom1 Nov 2012 → 26 Jan 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical MethodsFrom1 Oct 2012 → 28 Oct 2016Funding: Own budget, for example: patrimony, inscription fees, gifts
- Combined tunneling and Raman spectroscopy in nanogaps for single molecule analysis.From1 Oct 2011 → 30 Sep 2014Funding: FWO fellowships
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)From6 Sep 2011 → 19 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
21 - 30 of 177
- An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices(2016)
Authors: Koen Martens, Kristin De Meyer
Pages: 4707 - 4713 - Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?(2016)
Authors: Hao Yu, Clement Merckling, Kristin De Meyer
Pages: 604 - 607 - Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm2(2016)
Authors: Hao Yu, Kristin De Meyer
Pages: 4632 - 4641 - Record mobility (µeff ~3100 cm2/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer(2016)
Authors: Abhitosh Vais, Vamsi Putcha, Hao Yu, Kristin De Meyer
Pages: 140 - 141 - Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium(2016)
Authors: Hao Yu, Kristin De Meyer
Pages: 482 - 485 - Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation(2016)
Authors: Hao Yu, Kristin De Meyer
Pages: 66 - 67 - Top-down InGaAs nanowire and Fin vertical FETs with record performance(2016)
Authors: Siva Ramesh, Elisabeth Camerotto, Kristin De Meyer
Pages: 164 - 165 - MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond(2016)
Authors: Hao Yu, Kristin De Meyer
Pages: 19 - 24 - Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels(2016)
Authors: elena Capogreco, Jan Van Houdt, Kristin De Meyer, Wilfried Vandervorst
Pages: 192 - 193 - Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction(2015)
Authors: Hao Yu, Koen Martens, Kristin De Meyer
Pages: 600 - 602