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Researcher
Kristin De Meyer
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2010 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 31 Jul 2010
Projects
1 - 7 of 7
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAMFrom16 Jun 2014 → 25 Nov 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance StudyFrom20 Jan 2014 → 4 Sep 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical Transistors: a slippery path towards the ultimate CMOS scalingFrom1 Nov 2012 → 26 Jan 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical MethodsFrom1 Oct 2012 → 28 Oct 2016Funding: Own budget, for example: patrimony, inscription fees, gifts
- Combined tunneling and Raman spectroscopy in nanogaps for single molecule analysis.From1 Oct 2011 → 30 Sep 2014Funding: FWO fellowships
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)From6 Sep 2011 → 19 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
31 - 40 of 177
- Lateral NWFET optimization for beyond 7nm nodes(2015)
Authors: Dmitry Yakimets, Kristin De Meyer
Pages: 1 - 4 - On MOS admittance modeling to study border trap capture/emission and its effect on electrical behavior of high-k/III–V MOS devices(2015)
Authors: Abhitosh Vais, Koen Martens, Kristin De Meyer
Pages: 227 - 230 - MOVPE In1-xGaxAs high mobility channel for 3-D NAND memory(2015)
Authors: elena Capogreco, Kristin De Meyer, Jan Van Houdt
Pages: 1 - 4 - A 4×20Gb/s WDM ring-based hybrid CMOS silicon photonics transceiver(2015)
Authors: Michal Rakowski, Kristin De Meyer, Michiel Steyaert
Pages: 408 - 409 - Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 µS/µm at 50nm Lg using a replacement fin RMG flow(2015)
Authors: Niamh Waldron, Jacopo Franco, Abhitosh Vais, Clement Merckling, Kristin De Meyer
Pages: 3111 - 3114 - Vertical GAAFETs for the ultimate CMOS scaling(2015)
Authors: Dmitry Yakimets, Kristin De Meyer
Pages: 1433 - 1439 - Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications(2015)
Authors: elena Capogreco, Vu Luong, Kristin De Meyer, Jan Van Houdt
Pages: 109 - 112 - Contact reliability improvement of a poly-SiGe based nano-relay with titanium nitride coating(2015)
Authors: Maliheh Ramezani, Kristin De Meyer
Pages: 576 - 579 - Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks(2015)
Authors: Abhitosh Vais, Jacopo Franco, Kristin De Meyer
Pages: 223504 - 1.5×10-9 Ω·cm2 contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation(2015)
Authors: Hao Yu, Marc Schaekers, Erik Rosseel, Antony Peter, Joon-Gon Lee, Woo-Bin Song, Steven Demuynck, Thomas Chiarella, Lars-Ake Ragnarsson, Stefan Kubicek, et al.
Pages: 592 - 595