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Researcher
Kristin De Meyer
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From1 Aug 2010 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 31 Jul 2010
Projects
1 - 7 of 7
- Statistical Analysis and Modeling of Selectorless Non-filamentary Resistive RAMFrom16 Jun 2014 → 25 Nov 2019Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance StudyFrom20 Jan 2014 → 4 Sep 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Alternative Channel Materials for 3-D NAND MemoriesFrom15 Apr 2013 → 4 Sep 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- Vertical Transistors: a slippery path towards the ultimate CMOS scalingFrom1 Nov 2012 → 26 Jan 2017Funding: Own budget, for example: patrimony, inscription fees, gifts
- A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical MethodsFrom1 Oct 2012 → 28 Oct 2016Funding: Own budget, for example: patrimony, inscription fees, gifts
- Combined tunneling and Raman spectroscopy in nanogaps for single molecule analysis.From1 Oct 2011 → 30 Sep 2014Funding: FWO fellowships
- Nano-Electro-Mechanical Relays (Design, Fabrication, and Characterization)From6 Sep 2011 → 19 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
41 - 50 of 177
- 1.5×10-9 Ω·cm2 contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation(2015)
Authors: Hao Yu, Kristin De Meyer
Pages: 592 - 595 - The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices(2015)
Authors: Abhitosh Vais, Koen Martens, Jacopo Franco, Ali Reza Alian, Marc Heyns, Guido Groeseneken, Kristin De Meyer
Pages: 5 - CMOS Circuitry for Low Power Ring-based Silicon Photonics Optical Link(2014)
Authors: Michal Rakowski, Kristin De Meyer, Michiel Steyaert
Number of pages: 201 - Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors(2014)
Authors: Kuo-hsing Kao, Anne Verhulst, Wilfried Vandervorst, Marc Heyns, Kristin De Meyer
Pages: 1 - 11 - Perspective of tunnel-FET for future low-power technology nodes(2014)
Authors: Anne Verhulst, Devin Verreck, Kristin De Meyer, Guido Groeseneken, Marc Heyns
Pages: 717 - 720 - Highly sensitive, low-power, 10-20Gb/s transimpedance amplifier based on cascaded CMOS inverter gain stages(2014)
Authors: Michal Rakowski, Kristin De Meyer, Michiel Steyaert
Pages: 115 - 116 - Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation(2014)
Authors: Anne Verhulst, Mohammad Ali Pourghaderi, Kristin De Meyer
Pages: 44505 - A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction(2014)
Authors: Hao Yu, Kristin De Meyer
Pages: 957 - 959 - Submicron three-terminal SiGe electromechanical ohmic relay(2014)
Authors: Maliheh Ramezani, Kristin De Meyer
Pages: 1095 - 1098 - Lateral versus vertical gate-all-around FETs for beyond 7nm technologies(2014)
Authors: Dmitry Yakimets, Kristin De Meyer
Pages: 133 - 134