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Researcher
Marc Heyns
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → Today - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 31 Jul 2020 - Department of Materials Engineering (Department)
Member
From1 Oct 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2005 → 30 Sep 2007
Projects
1 - 10 of 28
- OPERANDO: In-situ observations of the dynamic processes inside the atomic resolution transmission electron microscopeFrom1 May 2020 → TodayFunding: FWO Medium Size Research Infrastructure
- Magnetoacoustic wave devices for ultralow power spintronicsFrom19 Jun 2019 → TodayFunding: FWO Strategic Basic Research Grant
- 2D Materials: Theoretical study of Magnetic and Contact propertiesFrom7 Dec 2018 → 20 Oct 2023Funding: Own budget, for example: patrimony, inscription fees, gifts
- Micromagnetic simulations for boolean and non-boolean logicFrom1 Sep 2018 → 31 Dec 2022Funding: FWO Strategic Basic Research Grant
- Interface Engineering for Performance Enhancement in 2D Field Effect TransistorsFrom3 Aug 2018 → 14 Mar 2024Funding: Own budget, for example: patrimony, inscription fees, gifts
- Understanding Interface Interactions in Graphene-Ruthenium Hybrids for Next Generation InterconnectsFrom6 Nov 2017 → 12 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Design and Characterization of Quantum Sillicon-Based Devices for Semiconducting Qubit Implementation.From1 Oct 2017 → 31 Mar 2022Funding: FWO Strategic Basic Research Grant
- Fundamental challenges for two dimensional semiconductorsFrom1 Oct 2017 → 30 Sep 2021Funding: Fund Recuperation Fiscal Exemption
- Design and Characterization of Quantum Devices for Superconducting Qubit ImplementationFrom20 Sep 2017 → 19 Aug 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs SystemFrom23 Aug 2017 → 11 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
11 - 20 of 534
- Towards Single-Molecule Sensing with Silicon bioFETs: Modeling and Experiments(2021)
Authors: Sybren Santermans, Marc Heyns, Koen Martens
- Impact of Emerging Electrical and Optical 3D Integration Technologies on High Bandwidth Interconnect Systems(2021)
Authors: Nicolas Pantano, Marian Verhelst, Marc Heyns
- Time-Domain Spin-Transfer Torque Induced Magnetic Tunnel Junction Reversal Dynamics - Pathways for Fast Spin-Logic Applications(2021)
Authors: Olivier Bultynck, Marc Heyns, Bart Sorée
- Metal induced charge transfer doping in graphene-ruthenium hybrid interconnects(2021)
Authors: Swati Achra, Valeri Afanasiev, Marc Heyns
Pages: 999 - 1011 - Design and Characterization of Quantum Sillicon-Based Devices for Semiconducting Qubit Implementation(2021)
Authors: Marc Heyns
- Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT(E) profile(2021)
Authors: Marc Heyns
- Low dephasing and robust micromagnet designs for silicon spin qubits(2021)
Authors: Marc Heyns
- Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators(2021)
Authors: Jeroen Verjauw, Rohith Acharya, Marc Heyns
- Role of Stronger Interlayer van der Waals Coupling in Twin-Free Molecular Beam Epitaxy of 2D Chalcogenides(2021)
Authors: Ruishen Meng, Michel Houssa, Stefan De Gendt, Marc Heyns, Clement Merckling
- Nanoscale domain wall devices with magnetic tunnel junction read and write(2021)
Authors: Eline Raymenants, Olivier Bultynck, Marc Heyns
Pages: 392 - +
Patents
1 - 7 of 7
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)
- A bilayer graphene tunneling field effect transistor (Inventor)
- Bilayer graphene tunneling field effect transistor (Inventor)
- Graphene-based semiconductor device (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)