Researcher
Niamh Waldron
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering, Metallurgical engineering
Affiliations
- Department of Materials Engineering (Department)
Member
From8 Sep 2008 → 7 Sep 2010
Publications
1 - 10 of 29
- Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 µS/µm at 50nm Lg using a replacement fin RMG flow(2015)
Authors: Niamh Waldron, Jacopo Franco, Abhitosh Vais, Clement Merckling, Kristin De Meyer
Pages: 3111 - 3114 - Heterogeneous nano- to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics(2015)
Authors: Iuliana Radu, Niamh Waldron, Dmitry Yakimets, Odysseas Zografos
Pages: 3 - 14 - Advanced semiconductor devices for future CMOS technologies(2015)
Authors: Cor Claeys, Iuliana Radu, Niamh Waldron
Pages: 49 - 60 - BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities(2014)
Authors: Guido Groeseneken, Jacopo Franco, Ali Reza Alian, Hiroaki Arimura, Niamh Waldron, Marc Heyns
Pages: 828 - 831 - First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping(2014)
Authors: Niamh Waldron, Sijia Jiang
Pages: 111 - 123 - Growth rate for the selective epitaxial growth of III-V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments(2014)
Authors: Sijia Jiang, Clement Merckling, Niamh Waldron, Wilfried Vandervorst, Marc Seefeldt, Marc Heyns
Pages: 59 - 63 - Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostrucures on Si for advanced CMOS devices(2014)
Authors: Clement Merckling, Niamh Waldron, Sijia Jiang, Marc Heyns, Wilfried Vandervorst
Pages: 107 - 112 - BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs(2014)
Authors: Jacopo Franco, Hiroaki Arimura, Niamh Waldron, Abhitosh Vais, Ali Reza Alian, Mohammad Ali Pourghaderi, Koen Martens, Marc Heyns, Guido Groeseneken
Pages: 53 - 57Number of pages: 5 - 15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process(2014)
Authors: Jacopo Franco, Niamh Waldron, Hiroaki Arimura
Pages: 138 - 139 - Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate(2014)
Authors: Sijia Jiang, Clement Merckling, Niamh Waldron, Wilfried Vandervorst, Marc Seefeldt, Marc Heyns
Pages: 501 - 511
Patents
1 - 3 of 3
- Method for manufacturing a hybrid mosfet device (Inventor)
- Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof (Inventor)
- Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof (Inventor)