A method of forming a semiconductor device structure KU Leuven
The present invent provides a method comprising forming (101) a first wafer (10) comprising a first substrate (11) of a group IV semiconductor, and a group III-V semiconductor device structure (12) formed by selective area epitaxial growth on a surface portion (13a) of a front side (13) of the first substrate (11). The method further comprises forming (102) a second wafer (20) comprising a second substrate (21) of a group IV semiconductor, and a group IV semiconductor device structure (22) formed on a front side (23) of the second substrate (21), and bonding (103) the first wafer (10) to the ...