A method for producing an interconnect rail for contacting a semiconductor device from the back side Interuniversity Microelectronics Centre
According to the invention, an interconnect rail (34) is produced by removing the base portion (1a) of a semiconductor fin (1) selectively with respect to the material (8) around the base portion, and the resulting trench (30) is filled with an electrically conductive material, so that the rail is self-aligned to the original fin. These steps are performed after processing a top portion (1b) of the fin for producing a semiconductor device, such as a nano-sheet field effect transistor or a finFET. The fin is uniform with a semiconductor substrate (5) on whose front surface the device is ...