Publications
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Single-event effects calibration using two-photon absorption and a CMOS image sensor KU Leuven
This paper proposes a method to get an indication of the amount of electron-hole pairs that are necessary to trigger a single-event effect (SEE) in electronics by using two-photon absorption (TPA) and a CMOS image sensor. One of the most important materials in electronics is silicon, which is also the photosensitive part of CMOS image sensors. TPA can occur in it when two photons with an energy lower than the bandgap energy interact with the ...
5.6 µm charge domain global shutter pixel with 90dB shutter efficiency KU Leuven
In-pixel charge transfer to a storage gate has become the standard architecture for global shutter CMOS image sensors. This paper presents a pixel structure with three closely spaced buried channel gates, a light waveguide, and a tungsten light shield with sidewall, reaching a shutter efficiency of 32 600:1 (90 dB) and full well charge of > 20 000 e- on 5.6 µm pitch.
Two-photon absorption in CMOS image sensors KU Leuven
This paper characterises the response of a CMOS image sensor with 2.7 μm pixels to light at 1550 nm. Two-photon absorption(TPA) occurs when two photons with an energy lower than the silicon bandgap energy interact with the same electron within ashort time window. This can be achieved by a focused pulsed laser beam above a critical light intensity. Our results show thatfor a burst of 450 fs light pulses at 1550 nm focused on ...
A BSI Global Shutter Pixel with Background Light Suppression for Multi-Frame Differential Imaging KU Leuven
Measuring Intra-Pixel Sensitivity Variations of a CMOS Image Sensor KU Leuven
© 2001-2012 IEEE. Some applications in scientific imaging, like space-based high-precision photometry, benefit from a detailed characterization of the sensitivity variation within a pixel. A detailed map of the intra-pixel sensitivity (IPS) allows to increase the photometric accuracy by correcting for the impact of the tiny sub-pixel movements of the image sensor during integration. This paper reports the measurement of the sub-pixel sensitivity ...
Kernel-based crosstalk quantification and analysis of a CMOS image sensor KU Leuven
© 2018 SPIE. Inter-pixel crosstalk degrades the point spread function (PSF) of a scientific imager which affects quantitative interpretation of scientific image data. Compared to the CCD, crosstalk is larger in the CMOS image sensor. This problem is challenging due to constant downscaling of the CMOS technology and pixel size. In this work, we parametrized the inter-pixel crosstalk and also modeled it as an empirically quantifiable kernel. A ...
Characterization of the per-pixel dark current and activation energy of a large format CMOS image sensor KU Leuven
© 2018 SPIE. In past decade, CMOS imagers are becoming increasingly popular in scientific imaging like astronomy. Large format image sensors are the detector of choice for the wide field imaging. The circuit integration capability of the CMOS imager is considered as an advantage while inducing the temperature variation over the sensor area. Dark current of the image sensor is strongly temperature-dependent signal and one of the limiting factors ...