Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions KU Leuven
© 2015 IEEE. The study of reliability and understanding of the MgO barrier breakdown mechanism is essential for the development of STT-MRAM, a promising non-volatile memory. However, for STT-MRAM it is unclear what the preferred method is for studying barrier breakdown. In this paper we compare four point probe Ramped Voltage Stress (4PP-RVS) with a conventional Constant Voltage Stress (CVS) technique and with pulsed breakdown (RF-BD). We show ...