Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology KU Leuven
The turn-on behavior of high-voltage-tolerant nLDMOS SCRs is investigated during CDM ESD events. An early failure occurs because of gate-oxide damage. A device optimization is proposed, which improves the CDM ESD robustness up to 2.7x, unchanging the HBM ESD robustness. ©2010 IEEE.