Publications
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Energy barriers at interfaces of high-mobility semiconductors with insulating oxides KU Leuven
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The electron energy band spectrum is of prime importance when attempting to engineer insulating stacks for application in metal-oxide semiconductor structures for practical applications. In particular, transition from traditional silicon to semiconductors with higher mobility (Ge, GaAs, InGaAs, InP, graphene…) poses significant challenges in terms of ...
Electron Spin Resonance of Interfaces and Nanolayers in Semiconductors KU Leuven
This work addresses the application of conventional electron spin resonance (ESR) spectrometry, as routinely operated in the 8-35 GHz microwave range, to semiconductor hetero structures (SHs), in particular semiconductor/insulator entities with focused interest on interfaces and thin dielectric (inter) layers. This predominantly entails probing of point defects where, by nature, the ESR method is only directly applicable to the subclass of ...
Electron Spin Resonance of Interfaces and Nanolayers in Semiconductors KU Leuven
This work addresses the application of conventional electron spin resonance (ESR) spectrometry, as routinely operated in the 8-35 GHz microwave range, to semiconductor hetero structures (SHs), in particular semiconductor/insulator entities with focused interest on interfaces and thin dielectric (inter) layers. This predominantly entails probing of point defects where, by nature, the ESR method is only directly applicable to the subclass of ...
Investigations of the surface chemical composition and atomic structure of ex-situ sulfur passivated Ge(100) KU Leuven
Using complementary surface analysis techniques, we have studied the chemical and structural properties of the S/Ge(100) passivation layer formed upon sulfidation in an aqueous (NH4)2S solution. Our experiments have revealed that only S-Ge bonds are formed upon the adsorption of S and that the surface is essentially free of other S-containing species (i.e. Snor SOx). The passivation treatment was found to reduce, but not to fully inhibit Ge-O ...
Study of InP surfaces after wet chemical treatments KU Leuven
In this work synchrotron radiation photoemission spectroscopy (SRPES) is used to study InP surfaces after different wet chemical treatments. All results are compared to a typical fingerprint of surface components present on an as received InP sample. It is shown that acidified (HCl and H2SO 4) treatments efficiently remove the native phosphate, although components like P0, In0 and P (2±Δ)+ remain present. In alkaline solution (NH 4OH) oxide ...
Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1-x/SiO2 interface KU Leuven
A study of the hydrogen passivation/dissociation kinetics of the GePb1(Ge dangling bond) defect at the (100) GexSi1-x/SiO2interface shows that the data can be well described by the same generalized simple thermal model as applied to the Si Pbdangling bond defect at the Si/SiO2interface, enabling inference of the relevant kinetic parameters. It is found that even for optimized treatment, only ∼60% of the GePb1system can be electrically ...
Effect of ammonium halide salts on wet chemical nanoscale etching and polishing of InGaAs surfaces for advanced CMOS devices Interuniversity Microelectronics Centre
Wet surface treatment of InGaAs is crucial for high-performance complementary metal-oxide semiconductor (CMOS) devices as it reduces material loss and oxide formation in the InGaAs layer. In this present study, the surface chemistries of In0.53Ga0.47As during wet chemical etching and the chemical-mechanical planarization (CMP) process in acidic (HCl/H2O2/H2O mixture) and alkaline (NH4OH/H2O2/H2O mixture) solutions were investigated. Elemental ...
Single Layer vs Bilayer Graphene: A Comparative Study of the Effects of Oxygen Plasma Treatment on Their Electronic and Optical Properties KU Leuven University of Antwerp
This contribution presents the effects of a mild O-2 plasma treatment on the structural, optical, and electrical properties of single-layer (SLG) and bilayer graphene (BLG). Unexpectedly, we observe only photoluminescence in the SLG parts of a graphene flake composed of regions of various thickness upon O-2 plasma treatment, whereas the BLG and few-layer graphene (FLG) parts remain optically unchanged. Confirmed with X-ray photoelectron ...