RF ESD Exploration in Si/III-V Heterogeneous Integration for 5G/B5G Applications KU Leuven
When moving to the 5G telecommunication era, higher data rate and thus higher bandwidth are the main requirements to enable this evolution. For RF ESD protection design in traditional CMOS front-end module (FEM) circuits, the parasitic capacitance of the ESD protection devices should be as low as possible to meet the 5G bandwidth requirements. However, it is usually challenging to reduce the parasitic capacitance without sacrificing the ESD ...