Non-volatile memory based on ferroelectric FETs Interuniversity Microelectronics Centre
The present disclosure is directed, in general, to semiconductor memory and, more specifically, to an integrated circuit including a three transistor random access memory, 3T RAM, cell and a method of operating an integrated circuit including a 3T RAM cell. The 3T RAM cell includes a ferroelectric-based field effect transistor, FeFET having a first gate connected as a storage node and a second transistor connected between the FeFET and a read bit line having a second gate connected to a read word line. The 3T RAM cell also includes a third transistor connected between the storage node and a ...