Trapping of oxygen vacancies at crystallographic shear planes in acceptor-doped Pb-based ferroelectrics University of Antwerp
The defect chemistry of the ferroelectric material PbTiO3 after doping with Fe-III acceptor ions is reported. Using advanced transmission electron microscopy and powder X-ray and neutron diffraction, we demonstrate that even at concentrations as low as circa 1.7% (material composition approximately ABO(2.95)), the oxygen vacancies are trapped into extended planar defects, specifically crystallographic shear planes. We investigate the evolution ...